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Наименование

Корпус

Transistor VCEO(V)

Transistor IC(mA)

MOSFET ID(A)

Diode VR(V)

Diode IO(mA)

Transistor hEF Min(V)

Diode VF(V)

Digital Transistor hFE@VCE/IC(V/mA)

Digital Transistor R1(KΩ)

Digital Transistor R2(KΩ)

Наименование	Производитель	Корпус	Transistor VCEO(V)	Transistor IC(mA)	MOSFET ID(A)	Diode VR(V)	Diode IO(mA)	Digital Transistor Vcc(V)	Digital Transistor IO(mA)
CJ5853DC	JSCJ	DFNWB3x2-8L-B			-2.7	20	1000
CJ5853DC Подробнее В запрос P-channel MOSFET and Schottky Barrier Diode MOSFET ID(A): -2.7 Diode VR(V): 20 Diode IO(mA): 1000 Operating Temperature Range (℃): -55 ~150 Diode VF(V): 0.48
CJ5853DCB	JSCJ	DFNWB3x2-8L-B			-2.7	20	500
CJ5853DCB Подробнее В запрос P-channel MOSFET and Schottky Barrier Diode MOSFET ID(A): -2.7 Diode VR(V): 20 Diode IO(mA): 500 Operating Temperature Range (℃): -55 ~150 Diode VF(V): 0.48
CJ7203KDW	JSCJ	SOT-363			0.34	40	350
CJ7203KDW Подробнее В запрос N-channel MOSFET and Schottky Barrier Diode MOSFET ID(A): 0.34 Diode VR(V): 40 Diode IO(mA): 350 Operating Temperature Range (℃): -55 ~150 Diode VF(V): 0.6
CJLJF3117P	JSCJ	DFNWB2x2-6L-A			-3.3	30	2000
CJLJF3117P Подробнее В запрос P-channel MOSFET and Schottky Barrier Diode MOSFET ID(A): -3.3 Diode VR(V): 30 Diode IO(mA): 2000 Operating Temperature Range (℃): -55 ~150 Diode VF(V): 0.55
CJLJF3117PB	JSCJ	DFNWB2x2-6L-U			-3.3	20	500
CJLJF3117PB Подробнее В запрос P-channel MOSFET and Schottky Barrier Diode MOSFET ID(A): -3.3 Diode VR(V): 20 Diode IO(mA): 500 Operating Temperature Range (℃): -55 ~150 Diode VF(V): 0.55
CJMNT30	JSCJ	DFNWB2×2-6L-SA	-30	-2000	0.69
CJMNT30 Подробнее В запрос PNP Power Transistor with N-MOSFET Transistor VCEO(V): -30 Transistor IC(mA): -2000 MOSFET ID(A): 0.69 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 100
CJMNT31	JSCJ	DFNWB2×2-6L	-30	-2000	0.8
CJMNT31 Подробнее В запрос PNP Power Transistor with N-MOSFET Transistor VCEO(V): -30 Transistor IC(mA): -2000 MOSFET ID(A): 0.8 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 100
CJMNT32	JSCJ	DFNWB2×2-6L	-32	-1500	0.8
CJMNT32 Подробнее В запрос PNP Power Transistor with N-MOSFET Transistor VCEO(V): -32 Transistor IC(mA): -1500 MOSFET ID(A): 0.8 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 100
CJMNT32-W	JSCJ	DFNWB2×2-6L-U	-30	-1500	0.8
CJMNT32-W Подробнее В запрос PNP Power Transistor with N-MOSFET Transistor VCEO(V): -30 Transistor IC(mA): -1500 MOSFET ID(A): 0.8 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 40
CJMNT33	JSCJ	DFNWB2×2-6L-I	-32	-1500	0.8
CJMNT33 Подробнее В запрос PNP Power Transistor with N-MOSFET Transistor VCEO(V): -32 Transistor IC(mA): -1500 MOSFET ID(A): 0.8 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 100
CJMNT34	JSCJ	DFNWB2×2-6L-SA	-32	-1500	0.8
CJMNT34 Подробнее В запрос PNP Power Transistor with N-MOSFET Transistor VCEO(V): -32 Transistor IC(mA): -1500 MOSFET ID(A): 0.8 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 100
CJMP06	JSCJ	DFNWB2x2-6L-A			-2	20	1000
CJMP06 Подробнее В запрос P-channel MOSFET and Schottky Barrier Diode MOSFET ID(A): -2 Diode VR(V): 20 Diode IO(mA): 1000 Operating Temperature Range (℃): -55 ~150 Diode VF(V): 0.575
CJZM718	JSCJ	DFNWB3×2-8L-I	-25	-3000	0.5
CJZM718 Подробнее В запрос PNP Power Transistor with N-MOSFET Transistor VCEO(V): -25 Transistor IC(mA): -3000 MOSFET ID(A): 0.5 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 300
EMF23	JSCJ	SOT-563	50	150				50	100
EMF23 Подробнее В запрос Independed PNP and Digital NPN transistors Transistor VCEO(V): 50 Transistor IC(mA): 150 Digital Transistor Vcc(V): 50 Digital Transistor IO(mA): 100 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 180 Digital Transistor hFE@VCE/IC(V/mA): 6/1 Digital Transistor R1(KΩ): 10+ Digital Transistor R2(KΩ): 10+
EMF24	JSCJ	SOT-563	50	150				50	100
EMF24 Подробнее В запрос Independed NPN and Digital NPN transistors Transistor VCEO(V): 50 Transistor IC(mA): 150 Digital Transistor Vcc(V): 50 Digital Transistor IO(mA): 100 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 180 Digital Transistor hFE@VCE/IC(V/mA): 6/1 Digital Transistor R1(KΩ): 10+ Digital Transistor R2(KΩ): 10+
EMF5	JSCJ	SOT-563	12	500				50	100
EMF5 Подробнее В запрос Independed PNP and Digital NPN transistors Transistor VCEO(V): 12 Transistor IC(mA): 500 Digital Transistor Vcc(V): 50 Digital Transistor IO(mA): 100 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 270 Digital Transistor hFE@VCE/IC(V/mA): 2/10 Digital Transistor R1(KΩ): 47+ Digital Transistor R2(KΩ): 47+
UMF21N	JSCJ	SOT-363	12	500				50	100
UMF21N Подробнее В запрос Independed PNP and Digital NPN transistors Transistor VCEO(V): 12 Transistor IC(mA): 500 Digital Transistor Vcc(V): 50 Digital Transistor IO(mA): 100 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 270 Digital Transistor hFE@VCE/IC(V/mA): 2/10 Digital Transistor R1(KΩ): 10+ Digital Transistor R2(KΩ): 10+
UMF5N	JSCJ	SOT-363	12	500				50	100
UMF5N Подробнее В запрос Independed PNP and Digital NPN transistors Transistor VCEO(V): 12 Transistor IC(mA): 500 Digital Transistor Vcc(V): 50 Digital Transistor IO(mA): 100 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 270 Digital Transistor hFE@VCE/IC(V/mA): 2/10 Digital Transistor R1(KΩ): 47+ Digital Transistor R2(KΩ): 47+
UML2N	JSCJ	SOT-353	50	150		80	300
UML2N Подробнее В запрос Isolated Transistor and Diode Transistor VCEO(V): 50 Transistor IC(mA): 150 Diode VR(V): 80 Diode IO(mA): 300 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 120 Diode VF(V): 1.2
UML6N	JSCJ	SOT-353	12	500		30	200
UML6N Подробнее В запрос Isolated Transistor and Diode Transistor VCEO(V): 12 Transistor IC(mA): 500 Diode VR(V): 30 Diode IO(mA): 200 Operating Temperature Range (℃): -55 ~150 Transistor hEF Min(V): 270 Diode VF(V): 0.5

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