SiC транзисторы

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Наименование

Производитель

Корпус

Норма упаковки

Vds(V)

Id(A)

Idm(A)

Vgs(th) min (V)

Vgs(th) max (V)

EAS(mJ)

Rds(on) mΩ (max) @Vgs=18 (20)V

Наименование	Производитель	Корпус	Норма упаковки	Vds(V)	Id(A)	Idm(A)	Vgs(th) min (V)	Vgs(th) max (V)	EAS(mJ)	Rds(on) mΩ (max) @Vgs=18 (20)V
GS120R033Q4A	GOFORD SEMI	TO-247-4	Tube 30	1200	69	114	1.8	3.5	729	44
GS120R033Q4A Datasheet Подробнее В запрос 1200V, 69A, N-CHANNEL, SiC MOSFET, TO-247-4, RoHS, Halogen Free Vds(V): 1200 Id(A): 69 Idm(A): 114 Vgs(th) min (V): 1.8 Vgs(th) max (V): 3.5 EAS(mJ): 729 Rds(on) mΩ (max) @Vgs=18 (20)V: 44 Operating Temperature Range (℃): -55~175
GS120R040Q4	GOFORD SEMI	TO-247-4	Tube 30	1200	50	125	1.8	3.7	400	53
GS120R040Q4 Datasheet Подробнее В запрос 1200V, 50A, N-CHANNEL, SiC MOSFET, TO-247-4, RoHS, Halogen Free Vds(V): 1200 Id(A): 50 Idm(A): 125 Vgs(th) min (V): 1.8 Vgs(th) max (V): 3.7 EAS(mJ): 400 Rds(on) mΩ (max) @Vgs=18 (20)V: 53 Operating Temperature Range (℃): -55~175
GS120R068Q4A	GOFORD SEMI	TO-247-4	Tube 30	1200	39	85	1.8	3.6	256	85
GS120R068Q4A Datasheet Подробнее В запрос 1200V, 39A, N-CHANNEL, SiC MOSFET, TO-247-4, Automotive, RoHS, Halogen Free Vds(V): 1200 Id(A): 39 Idm(A): 85 Vgs(th) min (V): 1.8 Vgs(th) max (V): 3.6 EAS(mJ): 256 Rds(on) mΩ (max) @Vgs=18 (20)V: 85 Operating Temperature Range (℃): -55~175
GS120R160Q4A	GOFORD SEMI	TO-247-4	Tube 30	1200	19	36	1.8	3.6	100	190
GS120R160Q4A Datasheet Подробнее В запрос 1200V, 19A, N-CHANNEL, SiC MOSFET, TO-247-4, RoHS, Halogen Free Vds(V): 1200 Id(A): 19 Idm(A): 36 Vgs(th) min (V): 1.8 Vgs(th) max (V): 3.6 EAS(mJ): 100 Rds(on) mΩ (max) @Vgs=18 (20)V: 190 Operating Temperature Range (℃): -55~175
GS65R030Q4A	GOFORD SEMI	TO-247-4	Tube 30	650	70	217	1.8	3.6	450
GS65R030Q4A Datasheet Подробнее В запрос 650V, 70A, N-CHANNEL, SiC MOSFET, TO-247-4, RoHS, Halogen Free Vds(V): 650 Id(A): 70 Idm(A): 217 Vgs(th) min (V): 1.8 Vgs(th) max (V): 3.6 EAS(mJ): 450 Operating Temperature Range (℃): -55~175
GS65R045Q4A	GOFORD SEMI	TO-247-4	Tube 30	650	51	120	1.8	3.6	313
GS65R045Q4A Datasheet Подробнее В запрос 650V, 51A, N-CHANNEL, SiC MOSFET, TO-247-4, RoHS, Halogen Free Vds(V): 650 Id(A): 51 Idm(A): 120 Vgs(th) min (V): 1.8 Vgs(th) max (V): 3.6 EAS(mJ): 313 Operating Temperature Range (℃): -55~175
GS65R060Q4A	GOFORD SEMI	TO-247-4	Tube 30	650	42	100	1.8	3.6	221
GS65R060Q4A Datasheet Подробнее В запрос 650V, 42A, N-CHANNEL, SiC MOSFET, TO-247-4, RoHS, Halogen Free Vds(V): 650 Id(A): 42 Idm(A): 100 Vgs(th) min (V): 1.8 Vgs(th) max (V): 3.6 EAS(mJ): 221 Operating Temperature Range (℃): -55~175
SICBG160N120A-TP	MCC	TO-263-7L	T&R 800	1200	18	72	1.5	3	216	160
SICBG160N120A-TP Datasheet Подробнее В запрос 1200V 18A N-channel SiC MOSFET Vds(V): 1200 Id(A): 18 Idm(A): 72 Vgs(th) min (V): 1.5 Vgs(th) max (V): 3 EAS(mJ): 216 Rds(on) mΩ (max) @Vgs=18 (20)V: 160 Operating Temperature Range (℃): -55~175
SICW020N065H-BP	MCC	TO-247AB	Tube 30	650	107	305	2	4.5	3200	0
SICW020N065H-BP Datasheet Подробнее В запрос 650V 107A N-channel SiC MOSFET Vds(V): 650 Id(A): 107 Idm(A): 305 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 3200 Operating Temperature Range (℃): -55~175
SICW020N065H4-BP	MCC	TO-247-4	Tube 30	650	107	305	2	4.5	3200	0
SICW020N065H4-BP Datasheet Подробнее В запрос 650V 107A N-channel SiC MOSFET Vds(V): 650 Id(A): 107 Idm(A): 305 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 3200 Operating Temperature Range (℃): -55~175
SICW021N120P-BP	MCC	TO-247AB	Tube 30	1200	100	250	2	4.5		29.4
SICW021N120P-BP Datasheet Подробнее В запрос 1200V 100A N-channel SiC MOSFET Vds(V): 1200 Id(A): 100 Idm(A): 250 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 Rds(on) mΩ (max) @Vgs=18 (20)V: 29.4 Operating Temperature Range (℃): -55~175
SICW021N120P4-BP	MCC	TO-247-4L	Tube 30	1200	100	250	2	4.5		29.4
SICW021N120P4-BP Datasheet Подробнее В запрос 1200V 100A N-channel SiC MOSFET Vds(V): 1200 Id(A): 100 Idm(A): 250 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 Rds(on) mΩ (max) @Vgs=18 (20)V: 29.4 Operating Temperature Range (℃): -55~175
SICW025N065H-BP	MCC	TO-247AB	Tube 30	650	107	305	2	4.5	3200	30
SICW025N065H-BP Datasheet Подробнее В запрос 650V 107A N-channel SiC MOSFET Vds(V): 650 Id(A): 107 Idm(A): 305 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 3200 Rds(on) mΩ (max) @Vgs=18 (20)V: 30 Operating Temperature Range (℃): -55~175
SICW025N065H4-BP	MCC	TO-247-4	Tube 30	650	107	305	2	4.5	3200	30
SICW025N065H4-BP Datasheet Подробнее В запрос 650V 107A N-channel SiC MOSFET Vds(V): 650 Id(A): 107 Idm(A): 305 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 3200 Rds(on) mΩ (max) @Vgs=18 (20)V: 30 Operating Temperature Range (℃): -55~175
SICW025N120H-BP	MCC	TO-247AB	Tube 30	1200	86	327	2	4.5	3000
SICW025N120H-BP Datasheet Подробнее В запрос 1200V 86A N-channel SiC MOSFET Vds(V): 1200 Id(A): 86 Idm(A): 327 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 3000 Operating Temperature Range (℃): -55~175
SICW025N120H4-BP	MCC	TO-247-4	Tube 30	1200	86	327	2	4.5	3000
SICW025N120H4-BP Datasheet Подробнее В запрос 1200V 86A N-channel SiC MOSFET Vds(V): 1200 Id(A): 86 Idm(A): 327 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 3000 Operating Temperature Range (℃): -55~175
SICW028N120A4-BP	MCC	TO-247-4	Tube 30	1200	80	320	1.5	3	1620
SICW028N120A4-BP Datasheet Подробнее В запрос 1200V 80A N-channel SiC MOSFET Vds(V): 1200 Id(A): 80 Idm(A): 320 Vgs(th) min (V): 1.5 Vgs(th) max (V): 3 EAS(mJ): 1620 Operating Temperature Range (℃): -55~175
SICW030N120H-BP	MCC	TO-247AB	Tube 30	1200	78	349	2	4.5	2500
SICW030N120H-BP Datasheet Подробнее В запрос 1200V 78A N-channel SiC MOSFET Vds(V): 1200 Id(A): 78 Idm(A): 349 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 2500 Operating Temperature Range (℃): -55~175
SICW030N120H4-BP	MCC	TO-247-4	Tube 30	1200	78	349	2	4.5	2500
SICW030N120H4-BP Datasheet Подробнее В запрос 1200V 78A N-channel SiC MOSFET Vds(V): 1200 Id(A): 78 Idm(A): 349 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 2500 Operating Temperature Range (℃): -55~175
SICW040N120H-BP	MCC	TO-247AB	Tube 30	1200	62	223	2	4.5	1875
SICW040N120H-BP Datasheet Подробнее В запрос 1200V 62A N-channel SiC MOSFET Vds(V): 1200 Id(A): 62 Idm(A): 223 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 1875 Operating Temperature Range (℃): -55~175
SICW040N120H4-BP	MCC	TO-247-4	Tube 30	1200	62	223	2	4.5	1875
SICW040N120H4-BP Datasheet Подробнее В запрос 1200V 62A N-channel SiC MOSFET Vds(V): 1200 Id(A): 62 Idm(A): 223 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 1875 Operating Temperature Range (℃): -55~175
SICW050N065H-BP	MCC	TO-247AB	Tube 30	650	60	127	2	4.5	1600
SICW050N065H-BP Datasheet Подробнее В запрос 650V 60A N-channel SiC MOSFET Vds(V): 650 Id(A): 60 Idm(A): 127 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 1600 Operating Temperature Range (℃): -55~175
SICW050N065H4-BP	MCC	TO-247-4	Tube 30	650	60	127	2	4.5	1600
SICW050N065H4-BP Datasheet Подробнее В запрос 650V 60A N-channel SiC MOSFET Vds(V): 650 Id(A): 60 Idm(A): 127 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 1600 Operating Temperature Range (℃): -55~175
SICW060N065H-BP	MCC	TO-247AB	Tube 30	650	60	127	2	4.5	1600	75
SICW060N065H-BP Datasheet Подробнее В запрос 650V 60A N-channel SiC MOSFET Vds(V): 650 Id(A): 60 Idm(A): 127 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 1600 Rds(on) mΩ (max) @Vgs=18 (20)V: 75 Operating Temperature Range (℃): -55~175
SICW060N065H4-BP	MCC	TO-247-4	Tube 30	650	60	127	2	4.5	1600	75
SICW060N065H4-BP Datasheet Подробнее В запрос 650V 60A N-channel SiC MOSFET Vds(V): 650 Id(A): 60 Idm(A): 127 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 1600 Rds(on) mΩ (max) @Vgs=18 (20)V: 75 Operating Temperature Range (℃): -55~175
SICW060N120H-BP	MCC	TO-247AB	Tube 30	1200	44.5	90.5	2	4.5	1250
SICW060N120H-BP Datasheet Подробнее В запрос 1200V 44.5A N-channel SiC MOSFET Vds(V): 1200 Id(A): 44.5 Idm(A): 90.5 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 1250 Operating Temperature Range (℃): -55~175
SICW060N120H4-BP	MCC	TO-247-4	Tube 30	1200	44.5	90.5	2	4.5	1250
SICW060N120H4-BP Datasheet Подробнее В запрос 1200V 44.5A N-channel SiC MOSFET Vds(V): 1200 Id(A): 44.5 Idm(A): 90.5 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 1250 Operating Temperature Range (℃): -55~175
SICW080N120H-BP	MCC	TO-247AB	Tube 30	1200	33	81	2	4.5
SICW080N120H-BP Datasheet Подробнее В запрос 1200V 33A N-channel SiC MOSFET Vds(V): 1200 Id(A): 33 Idm(A): 81 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 Operating Temperature Range (℃): -55~175
SICW080N120H4-BP	MCC	TO-247-4	Tube 30	1200	33	81	2	4.5
SICW080N120H4-BP Datasheet Подробнее В запрос 1200V 33A N-channel SiC MOSFET Vds(V): 1200 Id(A): 33 Idm(A): 81 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 Operating Temperature Range (℃): -55~175
SICW080N120Y-BP	MCC	TO-247	Tube 30	1200	38	80	2.3	3.6		85
SICW080N120Y-BP Datasheet Подробнее В запрос 1200V 38A N-channel SiC MOSFET Vds(V): 1200 Id(A): 38 Idm(A): 80 Vgs(th) min (V): 2.3 Vgs(th) max (V): 3.6 Rds(on) mΩ (max) @Vgs=18 (20)V: 85 Operating Temperature Range (℃): -55~175
SICW080N120Y4-BP	MCC	TO-247-4	Tube 30	1200	39	80	2.3	3.6		85
SICW080N120Y4-BP Datasheet Подробнее В запрос 1200V 39A N-channel SiC MOSFET Vds(V): 1200 Id(A): 39 Idm(A): 80 Vgs(th) min (V): 2.3 Vgs(th) max (V): 3.6 Rds(on) mΩ (max) @Vgs=18 (20)V: 85 Operating Temperature Range (℃): -55~175
SICW1000N170A-BP	MCC	TO-247AB	Tube 30	1700	3	12	2.5	4.5		1370
SICW1000N170A-BP Datasheet Подробнее В запрос 1700V 3A N-channel SiC MOSFET Vds(V): 1700 Id(A): 3 Idm(A): 12 Vgs(th) min (V): 2.5 Vgs(th) max (V): 4.5 Rds(on) mΩ (max) @Vgs=18 (20)V: 1370 Operating Temperature Range (℃): -55~175
SICW100N065H-BP	MCC	TO-247AB	Tube 30	650	32	58.5	2	4.5	800
SICW100N065H-BP Datasheet Подробнее В запрос 650V 32A N-channel SiC MOSFET Vds(V): 650 Id(A): 32 Idm(A): 58.5 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 800 Operating Temperature Range (℃): -55~175
SICW100N065H4-BP	MCC	TO-247-4	Tube 30	650	32	58.5	2	4.5	800
SICW100N065H4-BP Datasheet Подробнее В запрос 650V 32A N-channel SiC MOSFET Vds(V): 650 Id(A): 32 Idm(A): 58.5 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 800 Operating Temperature Range (℃): -55~175
SICW120N120H-BP	MCC	TO-247AB	Tube 30	1200	24	65	2	4.5	625
SICW120N120H-BP Datasheet Подробнее В запрос 1200V 24A N-channel SiC MOSFET Vds(V): 1200 Id(A): 24 Idm(A): 65 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 625 Operating Temperature Range (℃): -55~175
SICW120N120H4-BP	MCC	TO-247-4	Tube 30	1200	24	65	2	4.5	625
SICW120N120H4-BP Datasheet Подробнее В запрос 1200V 24A N-channel SiC MOSFET Vds(V): 1200 Id(A): 24 Idm(A): 65 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 625 Operating Temperature Range (℃): -55~175
SICW400N170A-BP	MCC	TO-247AB	Tube 30	1700	6	24	2	4.5	259	550
SICW400N170A-BP Datasheet Подробнее В запрос 1700V 6A N-channel SiC MOSFET Vds(V): 1700 Id(A): 6 Idm(A): 24 Vgs(th) min (V): 2 Vgs(th) max (V): 4.5 EAS(mJ): 259 Rds(on) mΩ (max) @Vgs=18 (20)V: 550 Operating Temperature Range (℃): -55~175

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