SiC транзисторы

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Наименование

Корпус

Норма упаковки

Drain-Source Voltage VDS (V)

Drain Current ID (A)

Pulsed Drain Current IDM(A)

Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω)

Gate Threshold Voltage VGS(th) Min (V)

Gate Threshold Voltage VGS(th) Max (V)

Single Pulsed Avalanche Energy EAS(mJ)

Наименование	Производитель	Корпус	Норма упаковки	Drain-Source Voltage VDS (V)	Drain Current ID (A)	Pulsed Drain Current IDM(A)	Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω)	Gate Threshold Voltage VGS(th) Min (V)	Gate Threshold Voltage VGS(th) Max (V)	Single Pulsed Avalanche Energy EAS(mJ)
SICBG160N120A-TP	MCC	TO-263-7L	T&R 800	1200	18	72	0.16	1.5	3	216
SICBG160N120A-TP Datasheet Подробнее В запрос 1200V 18A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 18 Pulsed Drain Current IDM(A): 72 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.16 Gate Threshold Voltage VGS(th) Min (V): 1.5 Gate Threshold Voltage VGS(th) Max (V): 3 Single Pulsed Avalanche Energy EAS(mJ): 216 Operating Temperature Range (℃): -55~175
SICW020N065H-BP	MCC	TO-247AB	Tube 30	650	107	305		2	4.5	3200
SICW020N065H-BP Datasheet Подробнее В запрос 650V 107A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 107 Pulsed Drain Current IDM(A): 305 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 3200 Operating Temperature Range (℃): -55~175
SICW020N065H4-BP	MCC	TO-247-4	Tube 30	650	107	305		2	4.5	3200
SICW020N065H4-BP Datasheet Подробнее В запрос 650V 107A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 107 Pulsed Drain Current IDM(A): 305 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 3200 Operating Temperature Range (℃): -55~175
SICW021N120P-BP	MCC	TO-247AB	Tube 30	1200	100	250	0.0294	2	4.5
SICW021N120P-BP Datasheet Подробнее В запрос 1200V 100A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 100 Pulsed Drain Current IDM(A): 250 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.0294 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Operating Temperature Range (℃): -55~175
SICW021N120P4-BP	MCC	TO-247-4L	Tube 30	1200	100	250	0.0294	2	4.5
SICW021N120P4-BP Datasheet Подробнее В запрос 1200V 100A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 100 Pulsed Drain Current IDM(A): 250 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.0294 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Operating Temperature Range (℃): -55~175
SICW025N065H-BP	MCC	TO-247AB	Tube 30	650	107	305	0.03	2	4.5	3200
SICW025N065H-BP Datasheet Подробнее В запрос 650V 107A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 107 Pulsed Drain Current IDM(A): 305 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.03 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 3200 Operating Temperature Range (℃): -55~175
SICW025N065H4-BP	MCC	TO-247-4	Tube 30	650	107	305	0.03	2	4.5	3200
SICW025N065H4-BP Datasheet Подробнее В запрос 650V 107A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 107 Pulsed Drain Current IDM(A): 305 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.03 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 3200 Operating Temperature Range (℃): -55~175
SICW025N120H-BP	MCC	TO-247AB	Tube 30	1200	86	327		2	4.5	3000
SICW025N120H-BP Datasheet Подробнее В запрос 1200V 86A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 86 Pulsed Drain Current IDM(A): 327 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 3000 Operating Temperature Range (℃): -55~175
SICW025N120H4-BP	MCC	TO-247-4	Tube 30	1200	86	327		2	4.5	3000
SICW025N120H4-BP Datasheet Подробнее В запрос 1200V 86A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 86 Pulsed Drain Current IDM(A): 327 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 3000 Operating Temperature Range (℃): -55~175
SICW028N120A4-BP	MCC	TO-247-4	Tube 30	1200	80	320		1.5	3	1620
SICW028N120A4-BP Datasheet Подробнее В запрос 1200V 80A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 80 Pulsed Drain Current IDM(A): 320 Gate Threshold Voltage VGS(th) Min (V): 1.5 Gate Threshold Voltage VGS(th) Max (V): 3 Single Pulsed Avalanche Energy EAS(mJ): 1620 Operating Temperature Range (℃): -55~175
SICW030N120H-BP	MCC	TO-247AB	Tube 30	1200	78	349		2	4.5	2500
SICW030N120H-BP Datasheet Подробнее В запрос 1200V 78A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 78 Pulsed Drain Current IDM(A): 349 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 2500 Operating Temperature Range (℃): -55~175
SICW030N120H4-BP	MCC	TO-247-4	Tube 30	1200	78	349		2	4.5	2500
SICW030N120H4-BP Datasheet Подробнее В запрос 1200V 78A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 78 Pulsed Drain Current IDM(A): 349 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 2500 Operating Temperature Range (℃): -55~175
SICW040N120H-BP	MCC	TO-247AB	Tube 30	1200	62	223		2	4.5	1875
SICW040N120H-BP Datasheet Подробнее В запрос 1200V 62A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 62 Pulsed Drain Current IDM(A): 223 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 1875 Operating Temperature Range (℃): -55~175
SICW040N120H4-BP	MCC	TO-247-4	Tube 30	1200	62	223		2	4.5	1875
SICW040N120H4-BP Datasheet Подробнее В запрос 1200V 62A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 62 Pulsed Drain Current IDM(A): 223 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 1875 Operating Temperature Range (℃): -55~175
SICW050N065H-BP	MCC	TO-247AB	Tube 30	650	60	127		2	4.5	1600
SICW050N065H-BP Datasheet Подробнее В запрос 650V 60A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 60 Pulsed Drain Current IDM(A): 127 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 1600 Operating Temperature Range (℃): -55~175
SICW050N065H4-BP	MCC	TO-247-4	Tube 30	650	60	127		2	4.5	1600
SICW050N065H4-BP Datasheet Подробнее В запрос 650V 60A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 60 Pulsed Drain Current IDM(A): 127 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 1600 Operating Temperature Range (℃): -55~175
SICW060N065H-BP	MCC	TO-247AB	Tube 30	650	60	127	0.075	2	4.5	1600
SICW060N065H-BP Datasheet Подробнее В запрос 650V 60A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 60 Pulsed Drain Current IDM(A): 127 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.075 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 1600 Operating Temperature Range (℃): -55~175
SICW060N065H4-BP	MCC	TO-247-4	Tube 30	650	60	127	0.075	2	4.5	1600
SICW060N065H4-BP Datasheet Подробнее В запрос 650V 60A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 60 Pulsed Drain Current IDM(A): 127 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.075 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 1600 Operating Temperature Range (℃): -55~175
SICW060N120H-BP	MCC	TO-247AB	Tube 30	1200	44.5	90.5		2	4.5	1250
SICW060N120H-BP Datasheet Подробнее В запрос 1200V 44.5A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 44.5 Pulsed Drain Current IDM(A): 90.5 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 1250 Operating Temperature Range (℃): -55~175
SICW060N120H4-BP	MCC	TO-247-4	Tube 30	1200	44.5	90.5		2	4.5	1250
SICW060N120H4-BP Datasheet Подробнее В запрос 1200V 44.5A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 44.5 Pulsed Drain Current IDM(A): 90.5 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 1250 Operating Temperature Range (℃): -55~175
SICW080N120H-BP	MCC	TO-247AB	Tube 30	1200	33	81		2	4.5
SICW080N120H-BP Datasheet Подробнее В запрос 1200V 33A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 33 Pulsed Drain Current IDM(A): 81 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Operating Temperature Range (℃): -55~175
SICW080N120H4-BP	MCC	TO-247-4	Tube 30	1200	33	81		2	4.5
SICW080N120H4-BP Datasheet Подробнее В запрос 1200V 33A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 33 Pulsed Drain Current IDM(A): 81 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Operating Temperature Range (℃): -55~175
SICW080N120Y-BP	MCC	TO-247	Tube 30	1200	38	80	0.085	2.3	3.6
SICW080N120Y-BP Datasheet Подробнее В запрос 1200V 38A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 38 Pulsed Drain Current IDM(A): 80 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.085 Gate Threshold Voltage VGS(th) Min (V): 2.3 Gate Threshold Voltage VGS(th) Max (V): 3.6 Operating Temperature Range (℃): -55~175
SICW080N120Y4-BP	MCC	TO-247-4	Tube 30	1200	39	80	0.085	2.3	3.6
SICW080N120Y4-BP Datasheet Подробнее В запрос 1200V 39A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 39 Pulsed Drain Current IDM(A): 80 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.085 Gate Threshold Voltage VGS(th) Min (V): 2.3 Gate Threshold Voltage VGS(th) Max (V): 3.6 Operating Temperature Range (℃): -55~175
SICW1000N170A-BP	MCC	TO-247AB	Tube 30	1700	3	12	1.37	2.5	4.5
SICW1000N170A-BP Datasheet Подробнее В запрос 1700V 3A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1700 Drain Current ID (A): 3 Pulsed Drain Current IDM(A): 12 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 1.37 Gate Threshold Voltage VGS(th) Min (V): 2.5 Gate Threshold Voltage VGS(th) Max (V): 4.5 Operating Temperature Range (℃): -55~175
SICW100N065H-BP	MCC	TO-247AB	Tube 30	650	32	58.5		2	4.5	800
SICW100N065H-BP Datasheet Подробнее В запрос 650V 32A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 32 Pulsed Drain Current IDM(A): 58.5 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 800 Operating Temperature Range (℃): -55~175
SICW100N065H4-BP	MCC	TO-247-4	Tube 30	650	32	58.5		2	4.5	800
SICW100N065H4-BP Datasheet Подробнее В запрос 650V 32A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 650 Drain Current ID (A): 32 Pulsed Drain Current IDM(A): 58.5 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 800 Operating Temperature Range (℃): -55~175
SICW120N120H-BP	MCC	TO-247AB	Tube 30	1200	24	65		2	4.5	625
SICW120N120H-BP Datasheet Подробнее В запрос 1200V 24A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 24 Pulsed Drain Current IDM(A): 65 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 625 Operating Temperature Range (℃): -55~175
SICW120N120H4-BP	MCC	TO-247-4	Tube 30	1200	24	65		2	4.5	625
SICW120N120H4-BP Datasheet Подробнее В запрос 1200V 24A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1200 Drain Current ID (A): 24 Pulsed Drain Current IDM(A): 65 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 625 Operating Temperature Range (℃): -55~175
SICW400N170A-BP	MCC	TO-247AB	Tube 30	1700	6	24	0.55	2	4.5	259
SICW400N170A-BP Datasheet Подробнее В запрос 1700V 6A N-channel SiC MOSFET Drain-Source Voltage VDS (V): 1700 Drain Current ID (A): 6 Pulsed Drain Current IDM(A): 24 Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω): 0.55 Gate Threshold Voltage VGS(th) Min (V): 2 Gate Threshold Voltage VGS(th) Max (V): 4.5 Single Pulsed Avalanche Energy EAS(mJ): 259 Operating Temperature Range (℃): -55~175

SiC транзисторы

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